PowerTrench MOSFET. FDG326 Datasheet

FDG326 Datasheet PDF, Equivalent


Part Number

FDG326

Description

P-Channel 1.8V Specified PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDG326 Datasheet PDF


FDG326 Datasheet
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–1.5 A, –20 V.
RDS(ON) = 140 m@ VGS = –4.5 V
RDS(ON) = 180 m@ VGS = –2.5 V
RDS(ON) = 250 m@ VGS = –1.8 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.26
FDG326P
7’’
16
25
34
Ratings
–20
±8
–1.5
–6
0.75
0.48
-55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)

FDG326 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = –8 V, VDS = 0 V
–20
–12
V
mV/°C
–1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.4 –0.9 –1.5
V
2 mV/°C
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.3 A
VGS = –1.8 V, ID = –0.8 A
VGS = –4.5 V, ID = –1.5 A, TJ = 125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V, ID = –1.5 A
–6
105 140
140 180
210 250
125 200
5.3
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
VDD = –10 V, ID = 1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10 V, ID = –1.5 A,
VGS = –4.5 V
467 pF
85 pF
38 pF
8 16
13 23
18 32
8 16
4.4 7
1.0
0.8
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.62 A (Note 2)
–0.62
–0.75 –1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper.
b.) 260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG326P Rev D(W)


Features Datasheet pdf FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET G eneral Description This P-Channel 1.8V specified MOSFET uses Fairchild’s adv anced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ V GS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V Applications • Battery ma nagement • Load switch • Low gate charge • High performance trench tech nology for extremely low RDS(ON) • Co mpact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltag e Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings – 20 ±8 (Note 1a) Units V V A W °C 1.5 –6 0.75 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resi.
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