P-Channel 1.8V Specified PowerTrench MOSFET
FDG326P
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V spec...
Description
FDG326P
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
–1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V
Applications
Battery management Load switch
Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
1
6
2
5
3
4
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W °C
–1.5 –6 0.75 0.48 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking .26 Device FDG326P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)
FDG326P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body L...
Similar Datasheet