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FDG6303N Datasheet, Equivalent, Digital FET.Dual N-Channel Digital FET Dual N-Channel Digital FET |
| Part | FDG6303N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | July 1999
FDG6303N Dual N-Channel, Digi tal FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced u sing Fairchild's proprietary, high cell density, DMOS technology. This very hi gh density process is especially tailor ed to minimize on-state resistance. Thi s device has been designed especially f or low voltage applications as a replac ement for bipolar digital transistors a nd small signal MOSFETs. Features 25 V , 0. 50 A continuous, 1. 5 A peak. RDS(ON ) = 0. 45 Ω @ VGS= 4. 5 V, RDS(ON) =0. 6 0 Ω @ VGS= 2. 7 V. Very low level gate drive requirement . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FDG6303N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | July 1999
FDG6303N Dual N-Channel, Digi tal FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced u sing Fairchild's proprietary, high cell density, DMOS technology. This very hi gh density process is especially tailor ed to minimize on-state resistance. Thi s device has been designed especially f or low voltage applications as a replac ement for bipolar digital transistors a nd small signal MOSFETs. Features 25 V , 0. 50 A continuous, 1. 5 A peak. RDS(ON ) = 0. 45 Ω @ VGS= 4. 5 V, RDS(ON) =0. 6 0 Ω @ VGS= 2. 7 V. Very low level gate drive requirement . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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