Digital FET. FDG6321C Datasheet

FDG6321C Datasheet PDF, Equivalent


Part Number

FDG6321C

Description

Dual N & P Channel Digital FET

Manufacture

Fairchild Semiconductor

Total Page 12 Pages
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Download FDG6321C Datasheet


FDG6321C Datasheet
November 1998
FDG6321C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for bipolar digital transistors and
small signal MOSFETS. Since bias resistors are not required,
this dual digital FET can replace several different digital
transistors, with different bias resistor values.
Features
N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V.
RDS(ON) = 0.60 @ VGS= 2.7 V.
P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 @ VGS= -4.5V.
RDS(ON) = 1.5 @ VGS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits(VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1 .21
SC70-6
D2
G1
S1
16
25
34
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
N-Channel
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
25
8
0.5
1.5
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.41
-1.2
Units
V
V
A
W
°C
kV
°C/W
© 1998 Fairchild Semiconductor Corporation
FDG6321C Rev. D

FDG6321C Datasheet
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate - Body Leakage Current
IGSS Gate - Body Leakage Current
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID= 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS = 20 V, VGS = 0 V
TJ = 55°C
VDS = -20 V, VGS = 0 V
TJ = 55°C
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient
RDS(ON)
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VGS = 4.5 V, ID = 0.5 A
TJ =125°C
VGS = 2.7 V, ID = 0.2 A
VGS = -4.5 V, ID = -0.41 A
TJ =125°C
VGS = -2.7 V, ID = -0.25 A
VGS = 4.5 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V
VDS = 5 V, ID = 0.5 A
VDS = -5 V, ID = -0.41 A
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -10 V, VGS = 0V,
f = 1.0 MHz
Type Min
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
25
-25
P-Ch
N-Ch
P-Ch
N-Ch 0.65
P-Ch -0.65
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch 0.5
P-Ch -0.41
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ
26
-22
0.8
-0.82
-2.6
2.1
0.34
0.55
0.44
0.85
1.2
1.15
1.45
0.9
50
62
28
34
9
10
Max Units
V
mV/oC
1 µA
10
-1 µA
-10
100 nA
-100 nA
1.5 V
-1.5
mV/ oC
0.45
0.72
0.6
1.1
1.8
1.5
A
S
pF
FDG6321C Rev. D


Features Datasheet pdf November 1998 FDG6321C Dual N & P Chann el Digital FET General Description Thes e dual N & P-Channel logic level enhanc ement mode field effect transistors are produced using Fairchild's proprietary , high cell density, DMOS technology. T his very high density process is especi ally tailored to minimize on-state resi stance. This device has been designed e specially for low voltage applications as a replacement for bipolar digital tr ansistors and small signal MOSFETS. Sin ce bias resistors are not required, thi s dual digital FET can replace several different digital transistors, with dif ferent bias resistor values. Features N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2 .7 V. P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requi rements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V). Gate-Sourc e Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SOT-23 Su.
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