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FDG6335N Dataheets PDF



Part Number FDG6335N
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 20V N&P-Channel MOSFET
Datasheet FDG6335N DatasheetFDG6335N Datasheet (PDF)

FDG6335N October 2001 FDG6335N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Low gate charge .

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FDG6335N October 2001 FDG6335N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Low gate charge (1.1 nC typical) • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package Applications • DC/DC converter • Power management • Loadswitch S G D D G Pin 1 S 1 or 4 G 2 or 5 6 or 3 D 5 or 2 G 4 or 1 S Dual N-Channel S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1) Units V V A W °C 0.7 2.1 0.3 –55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking .35 Device FDG6335N Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDG6335N Rev C (W) FDG6335N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µ A Min 20 Typ Max Units V Off Characteristics ID = 250 µ A, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V 14 1 100 –100 mV/°C µA nA nA VGS = –12 V, VDS = 0 V ID = 250 µ A On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, 0.6 1.1 –2.8 180 293 247 1.5 V mV/°C ID = –250 µ A, Referenced to 25°C VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 0.7 A ID = 0.6 A ID = 0.7 A, TJ=125°C VDS = 5 V ID = 0.7 A 300 400 442 mΩ ID(on) gFS 1 2.8 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 113 34 16 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 7 9 1.5 10 15 18 3 1.4 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 0.7 A, 1.1 0.24 0.3 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.25 A (Note 2) 0.25 0.74 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG6335N Rev C (W) FDG6335N Typical Characteristics 4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V ID, DRAIN CURRENT (A) 3.5V 3 2.5V 3.0V 1.8 1.6 VGS = 2.5V 1.4 3.0V 3.5V 4.0V 1 4.5V 2 1.2 2.0V 1 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 I D, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4 ID =0.4A 0.6 1.2 TA = 125oC 0.4 1 TA = 25oC 0.2 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 2.5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V I D, DRAIN CURRENT (A) 2 TA = -55 oC 25oC 125oC 1 TA = 125o C 25 oC -55oC 1.5 0.1 1 0.01 0.5 0.001 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6335N Rev C (W) FDG6335N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.7A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V 200 f = 1MHz VGS = 0 V 150 CISS 100 2 COSS 50 1 CRSS 0 0 0.4 0.8 Qg , GATE CHARGE (nC) 1.2.


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