PowerTrench MOSFETs. FDG6335N Datasheet

FDG6335N Datasheet PDF, Equivalent


Part Number

FDG6335N

Description

20V N & P-Channel PowerTrench MOSFETs

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDG6335N Datasheet PDF


FDG6335N Datasheet
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
DC/DC converter
Power management
Loadswitch
Features
0.7 A, 20 V.
RDS(ON) = 300 m@ VGS = 4.5 V
RDS(ON) = 400 m@ VGS = 2.5 V
Low gate charge (1.1 nC typical)
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
Dual N-Channel
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.35
FDG6335N
7’’
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)

FDG6335N Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = –12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V,
VGS = 4.5 V,
VDS = 5 V,
ID = 0.7 A
ID = 0.6 A
ID = 0.7 A, TJ=125°C
VDS = 5 V
ID = 0.7 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V, ID = 0.7 A,
VGS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 0.25 A (Note 2)
Voltage
20 V
14 mV/°C
1
100
–100
µA
nA
nA
0.6 1.1 1.5
V
–2.8 mV/°C
180 300
293 400
247 442
m
1A
2.8 S
113 pF
34 pF
16 pF
5
7
9
1.5
1.1
0.24
0.3
10
15
18
3
1.4
ns
ns
ns
ns
nC
nC
nC
0.25
0.74 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6335N Rev C (W)


Features Datasheet pdf FDG6335N October 2001 FDG6335N 20V N-C hannel PowerTrench® MOSFET General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regul ators, providing an extremely low RDS(O N) and gate charge (QG) in a small pack age. Features • 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Low gate charge (1.1 nC typical) • High performance trench technology for extremely low RDS (ON) • Compact industry standard SC70 -6 surface mount package Applications • DC/DC converter • Power managemen t • Loadswitch S G D D G Pin 1 S 1 o r 4 G 2 or 5 6 or 3 D 5 or 2 G 4 or 1 S Dual N-Channel S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Ma ximum Ratings Symbol VDSS VGSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulse.
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