Leakage Diode. FDH3595 Datasheet

FDH3595 Datasheet PDF, Equivalent


Part Number

FDH3595

Description

High Conductance Low Leakage Diode

Manufacture

Fairchild Semiconductor

Total Page 3 Pages
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FDH3595 Datasheet
FDH3595
Discrete POWER & Signal
Technologies
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
125
200
500
600
1.0
4.0
-65 to +175
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
MMBD7000*
500
3.33
300
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation

FDH3595 Datasheet
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Voltage Leakage Current
VF Forward Voltage
CT Diode Capacitance
Test Conditions
IR = 100 µA
VR = 125 V
VR = 30 V, TA = 125°C
VR = 125 V, TA = 125°C
VR = 125 V, TA = 150°C
IF = 1.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
VR = 0, f = 1.0 MHz
Min
150
520
600
650
750
790
0.83
Max
1.0
300
500
3.0
680
760
800
890
920
1.0
8.0
Units
V
nA
nA
nA
µA
mV
mV
mV
mV
mV
V
pF


Features Datasheet pdf FDH3595 Discrete POWER & Signal Technol ogies FDH3595 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characterist ics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC F orward Current Recurrent Peak Forward C urrent TA = 25°C unless otherwise not ed Parameter Value 125 200 500 600 1. 0 4.0 -65 to +175 175 Units V mA mA mA A A °C °C Tstg TJ Peak Forward Sur ge Current Pulse width = 1.0 second Pul se width = 1.0 microsecond Storage Temp erature Range Operating Junction Temper ature *These ratings are limiting valu es above which the serviceability of an y semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 de grees C. 2) These are steady state limi ts. The factory should be consulted on applications involving pulsed or low du ty cycle operations. Thermal Character istics Symbol PD RθJA TA = 25°C unless otherwise noted Character.
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