FDH3595

FDH3595 Discrete POWER & Signal Technologies FDH3595 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Parameter Value 125 200 500 600 1.0 4.0 -65 to +175 175 Units V mA mA mA A A °C °C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max MMBD7000* 500 3.33 300 Units mW mW/°C °C/W ã 1997 Fairchild Semiconductor Corporation FDH3595 High Conductance Low Leakage Diode (continued) Electrical Characteristics Symbol BV IR TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reverse Voltage Leakage Current Test Conditions IR = 100 µ A VR = 125 V VR = 30 V, TA = 125°C VR = 125 V, TA = 125°C VR = 125 V, TA = 150°C IF = 1.0 mA IF =...