High Conductance Ultra Fast Diode
1N4150 / FDLL4150
Discrete POWER & Signal Technologies
1N4150 / FDLL4150
COLOR BAND MARKING DEVICE FDLL4150 1ST BAND ...
Description
1N4150 / FDLL4150
Discrete POWER & Signal Technologies
1N4150 / FDLL4150
COLOR BAND MARKING DEVICE FDLL4150 1ST BAND 2ND BAND BLACK ORANGE
LL-34 DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50 200 400 600 1.0 4.0 -65 to +200 175
Units
V mA mA mA A A °C °C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
1N / FDLL 4150 500 3.33 300
Units
mW mW/°C °C/W
ã 1997 Fairchild Semiconductor Corporation
1N4150 / FDLL4150
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF
TA = 25°C unless...
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