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FDN306P Dataheets PDF



Part Number FDN306P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet FDN306P DatasheetFDN306P Datasheet (PDF)

FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench te.

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation Parameter Ratings –12 ±8 (Note 1a) Units V V A W °C –2.6 –10 0.5 0.46 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 306 Device FDN306P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDN306P Rev D (W) FDN306P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min –12 Typ Max Units V Off Characteristics ID = –250 µA,Referenced to 25°C VDS = –10 V, VGS = 8 V, VGS = –8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA –0.4 –0.6 2.5 30 39 54 40 –10 10 1138 454 302 11 10 38 35 VDS = –6 V, VGS = –4.5 V ID = –2.6 A, 12 2 3 –0.42 (Note 2) –3 –1 100 –100 –1.5 mV/°C µA nA nA V mV/°C 40 50 80 54 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA,Referenced to 25°C VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V, ID = –2.3 A ID = –1.8 A VGS = –1.8V, VGS = –4.5 V, ID = –2.6A , TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –2.6 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 20 20 61 56 17 ns ns ns ns nC nC nC A V Dynamic Characteristics VDS = –6 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diod.


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