Document
FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V
Applications
• Battery management • Load switch • Battery protection
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
D
D
S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
Parameter
Ratings
–12 ±8
(Note 1a)
Units
V V A W °C
–2.6 –10
0.5 0.46 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 306 Device FDN306P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDN306P Rev D (W)
FDN306P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = –250 µA
Min
–12
Typ
Max Units
V
Off Characteristics
ID = –250 µA,Referenced to 25°C VDS = –10 V, VGS = 8 V, VGS = –8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA –0.4 –0.6 2.5 30 39 54 40 –10 10 1138 454 302 11 10 38 35 VDS = –6 V, VGS = –4.5 V ID = –2.6 A, 12 2 3 –0.42
(Note 2)
–3 –1 100 –100 –1.5
mV/°C µA nA nA V mV/°C 40 50 80 54 mΩ
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance
VDS = VGS,
ID = –250 µA,Referenced to 25°C VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V, ID = –2.3 A ID = –1.8 A VGS = –1.8V, VGS = –4.5 V, ID = –2.6A , TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –2.6 A
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
A S pF pF pF 20 20 61 56 17 ns ns ns ns nC nC nC A V
Dynamic Characteristics
VDS = –6 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = –6 V, VGS = –4.5 V,
ID = –1 A, RGEN = 6 Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diod.