single P-Channel MOSFET
November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V spec...
Description
November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
6 33
S
SuperSOT -3
TM
G
G S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25oC unless other wise noted FDN336P -20 ±8 Units V V A
- Continuous - Pulsed
-1.3 -10
(Note 1a) (Note 1b)
Maximum Power Dissipation
0.5 0.46 -55 to +150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDN336P Rev.C
Electrical Characteristics (TA = 25 OC unless ot...
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