Effect Transistor. FDN338P Datasheet

FDN338P Datasheet PDF, Equivalent


Part Number

FDN338P

Description

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDN338P Datasheet PDF


FDN338P Datasheet
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
November 2013
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–1.6 A, –20 V. RDS(ON) = 115 m@ VGS = –4.5 V
RDS(ON) = 155 m@ VGS = –2.5 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
338
FDN338P
7’’
©2001 Fairchild Semiconductor Corporation
GS
Ratings
–20
±8
–1.6
–5
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN338P Rev F1(W)

FDN338P Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
BV DSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
–20
–16
V
mV/°C
–1
100
–100
µA
nA
nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.4 –0.8 –1.5 V
2.7 mV/°C
VGS = –4.5 V, ID = –1.6 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.6 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –1.6 A
–5
88 115
117 155
116 165
6
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
451 pF
75 pF
33 pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10 V, ID = –1.6 A,
VGS = –4.5 V
10 20
11 20
16 29
6.5 13
4.4 6.2
1.1
0.7
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42 (Note 2)
Voltage
–0.42
–0.7 –1.2
A
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDN338P Rev F1(W)


Features Datasheet pdf FDN338P FDN338P P-Channel 2.5V Specifie d PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s ad vanced low voltage PowerTrench process. It has been optimized for battery powe r management applications. Applications • Battery management • Load switch • Battery protection Features • 1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V • Fast switching speed High performance trench technology fo r extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM- 3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V G SS ID PD Parameter Drain-Source Voltag e Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Di ssipation (Note 1a) (Note 1b) TJ, TST G Operating and Storage Junction Tempe rature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal .
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