FDN338P

FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection Features –1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 338 FDN338P 7’’ ©2001 Fairchild Semiconductor Corporation GS Ratings –20 ±8 –1.6 –5 0.5 0.46 –55 to +150 250 75 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units FDN338P Rev F1(W) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltag...