PowerTrench MOSFET. FDN339AN Datasheet

FDN339AN Datasheet PDF, Equivalent


Part Number

FDN339AN

Description

N-Channel 2.5V Specified PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDN339AN Datasheet


FDN339AN Datasheet
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrenchMOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Load switch
Features
3 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V
RDS(ON) = 0.050 @ VGS = 2.5 V.
Low gate charge (7nC typical).
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
339
FDN339AN
7’’
GS
Ratings
20
±8
3
20
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDN339AN Rev. C

FDN339AN Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
20
14
V
mV/°C
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
1 µA
100 nA
VGS = -8 V, VDS = 0 V
-100 nA
VDS = VGS, ID = 250 µA
0.4
ID = 250 µA,Referenced to 25°C
0.85
-3
1.5 V
mV/°C
VGS = 4.5 V, ID = 3 A
0.029 0.035
VGS = 4.5 V, ID = 3 A, TJ=125°C
0.040 0.061
VGS = 2.5 V, ID = 2.4 A
0.039 0.050
VGS = 4.5 V, VDS = 5 V
10
VDS = 5 V, ID = 3 A
11
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
700 pF
175 pF
85 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V, ID = 3 A,
VGS = 4.5 V
8 16
10 18
18 29
5 10
7 10
1.2
1.9
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
0.42 A
VSD
Notes:
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
2)
(Note
0.65 1.2
V
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
b) 270°C/W on a minimum
mounting pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDN339AN Rev. C


Features Datasheet pdf FDN339AN November 1999 FDN339AN N-Chan nel 2.5V Specified PowerTrench MOSFE T General Description This N-Channel 2. 5V specified MOSFET is produced using F airchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resi stance and yet maintain low gate charge for superior switching performance. F eatures • 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V. • • • Low gate ch arge (7nC typical). High performance tr ench technology for extremely low RDS(O N). High power and current handling cap ability. Applications • DC/DC conver ter • Load switch D D S SuperSOT - 3 TM G TA = 25°C unless otherwise not ed G S Absolute Maximum Ratings Symb ol VDSS VGSS ID PD TJ, T stg Drain-Sour ce Voltage Gate-Source Voltage Drain Cu rrent - Continuous - Pulsed Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 3 20 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Juncti.
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