FDN359AN

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D D 9A 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted Ratings Units VDSS VGSS ID PD TJ,TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1a) 30 ±20 2.7 15 0.5 0.46 -55 to 150 V V A W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W © 1999 Fairchild Semiconductor Corporation FDN359AN Rev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERI...