PowerTrenchTM MOSFET. FDN360P Datasheet

FDN360P Datasheet PDF, Equivalent


Part Number

FDN360P

Description

Single P-Channel PowerTrenchTM MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDN360P Datasheet PDF


FDN360P Datasheet
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
-2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V
RDS(on) = 0.125 @ VGS = -4.5 V.
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
360
FDN360P
7’’
GS
Ratings
-30
±20
-2
-20
0.5
0.46
-55 to +150
Units
V
V
A
W
°C
250 °C/W
75 °C/W
Tape Width
8mm
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDN360P Rev. D

FDN360P Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to
25°C
VDS = -24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
-30
20
V
mV/°C
-1 µA
100 nA
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to
25°C
VGS = -10 V, ID = -2 A
VGS = -10 V, ID = -2 A, TJ=125°C
VGS = -4.5 V, ID = -1.5 A
VGS = -10 V, VDS = -5 V
VDS = -5 V, ID = -2 A
-1 -1.8 -3
V
-4 mV/°C
0.060 0.080
0.080 0.136
0.095 0.125
-20
5.5
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
420 pF
140 pF
60 pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = -15 V, ID = -1 A,
VGS = -10 V, RGEN = 6
VDS = -15 V, ID = -2 A,
VGS = -10 V,
9 18
8 16
18 29
6 12
57
1.7
1.8
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2)
-0.42
-0.75 -1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
b) 270°C/W when
mounted on a 0.001 in2
pad of 2 oz. Cu.
FDN360P Rev. D


Features Datasheet pdf FDN360P February 1999 FDN360P Single P -Channel PowerTrenchTM MOSFET General D escription This P-Channel Logic Level M OSFET is produced using Fairchild Semic onductor's advanced PowerTrench process that has been especially tailored to m inimize on-state resistance and yet mai ntain superior switching performance. T hese devices are well suited for low vo ltage and battery powered applications where low in-line power loss and fast s witching are required. Features • -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V. • • • • Low gate charge (5 nC typical). Fast switching speed. High performance trench technology for extr emely low RDS(ON). High power and curre nt handling capability. Applications • • DC/DC converter Load switch Motor drives D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Volta ge Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 (.
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