FDN5618P

FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V RDS(ON) = 0.230 Ω @ VGS = –4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) Applications DC-DC converters Load switch Power management D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed PD TJ, TSTG Maximum Power Dissipation Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –1.25 –10 0.5 0.46 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 618 Device FDN5618P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDN5618P Rev B(W) FDN5618P Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward ...