FDP047AN08A0

FDP047AN08A0 April 2002 FDP047AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.7mΩ Features r DS(ON) = 4.0mΩ (Typ.), V GS = 10V, ID = 80A Qg(tot) = 92nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82684 Applications 42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems DRAIN (FLANGE) D SOURCE DRAIN GATE G S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 144oC, VGS = 10V) Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 15 Figure 4 600 310 2.0 -55 to 175 A A A mJ W W/oC o Ratings 75 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 (Note 2) 0.48 62 o o C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at:...