62A/ 13.5m. FDP13AN06A Datasheet

FDP13AN06A Datasheet PDF, Equivalent


Part Number

FDP13AN06A

Description

N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
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FDP13AN06A Datasheet
July 2003
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET
60V, 62A, 13.5m
Features
• rDS(ON) = 11.5m(Typ.), VGS = 10V, ID = 62A
• Qg(tot) = 22nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82555
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
D
G
S
Ratings
60
±20
62
44
10.9
Figure 4
56
115
0.77
-55 to 175
1.3
62
43
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1

FDP13AN06A Datasheet
Package Marking and Ordering Information
Device Marking
FDB13AN06A0
FDP13AN06A0
Device
FDB13AN06A0
FDP13AN06A0
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 62A, VGS = 10V
ID = 31A, VGS = 6V
ID = 62A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain MillerCharge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 62A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 30V, ID = 62A
VGS = 10V, RGS = 12
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 45µH, IAS = 50A.
2: Pulse width = 100s.
ISD = 62A
ISD = 31A
ISD = 62A, dISD/dt = 100A/µs
ISD = 62A, dISD/dt = 100A/µs
Min Typ Max Units
60 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.0115 0.0135
- 0.022 0.034
- 0.026 0.030
- 1350 -
pF
- 260 -
pF
- 90 - pF
22 29 nC
- 2.6 3.4 nC
- 8.5 - nC
- 5.9 - nC
- 6.4 - nC
- - 158 ns
- 9 - ns
- 96 - ns
- 24 - ns
- 26 - ns
- - 74 ns
-
-
1.25
V
- - 1.0 V
- - 25 ns
- - 17 nC
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1


Features Datasheet pdf FDB13AN06A0 / FDP13AN06A0 July 2003 FD B13AN06A0 / FDP13AN06A0 N-Channel Power Trench® MOSFET 60V, 62A, 13.5mΩ Feat ures • r DS(ON) = 11.5mΩ (Typ.), VG S = 10V, ID = 62A • Qg(tot) = 22nC (T yp.), VGS = 10V • Low Miller Charge Low QRR Body Diode • UIS Capabilit y (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly devel opmental type 82555 Applications • M otor / Body Load Control • ABS System s • Powertrain Management • Injecti on Systems • DC-DC converters and Off -line UPS • Distributed Power Archite ctures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE TO-220AB FDP S ERIES TO-263AB FDB SERIES DRAIN (FLANGE ) GATE G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol V DSS VGS Parameter Drain to Source Volta ge Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID C ontinuous (TC = 100oC, VGS = 10V) Conti nuous (TA = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Ene.
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