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FDP14AN06LA

Fairchild Semiconductor

N-Channel MOSFET

FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ Fe...


Fairchild Semiconductor

FDP14AN06LA

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Description
FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ Features r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A Qg(tot) = 24nC (Typ.), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 83557 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TA = 25oC, VGS = 5V, Rθ JA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 67 60 10 Figure 4 46 125 0.83 -55 to 175 A A A A mJ W W/oC o Ratings 60 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.2 62 43 oC/W o o C/W C/W This product has been designed to meet the extreme test conditions and en...




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