Document
FDP16AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
FDP16AN08A0
N-Channel PowerTrench® MOSFET
75 V, 58 A, 16 mΩ
Features
Applications
• RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Low Miller Charge
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82660
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA
Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient (Note 2), Max.
S
FDP16AN08A0
75 ±20
58 44 9 Figure 4 117 135 0.9 -55 to 175
Unit
V V
A
A A mJ W W/oC oC
1.11 62
oC/W oC/W
©2002 Fairchild Semiconductor Corporation
1
FDP16AN08A0 Rev. C2
www.fairchildsemi.com
FDP16AN08A0 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking FDP16AN08A0
Device FDP16AN08A0
Package TO-220
Reel Size Tube
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 60V VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA ID = 58A, VGS = 10V ID = 29A, VGS = 6V ID = 58A, VGS = 10V, TJ = 175oC
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
ID = 58A Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 40V, ID = 58A VGS = 10V, RGS = 10Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr QRR
Reverse Recovery Time Reverse Recovered Charge
Notes: 1: Starting TJ = 25°C, L = 260µH, IAS = 30A.
ISD = 58A ISD = 29A ISD = 58A, dISD/dt = 100A/µs ISD = 58A, dISD/dt = 100A/µs
Min Typ Max Unit
75
-
-
V
-
-
1
µA
-
-
250
-
-
±100 nA
2
-
4
V
-
0.013 0.016
-
0.019 0.029
Ω
-
0.032 0.037
-
1857
-
pF
-
288
-
pF
-
88
-
pF
28
42
nC
-
3..