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FDP16AN08A0 Dataheets PDF



Part Number FDP16AN08A0
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP16AN08A0 DatasheetFDP16AN08A0 Datasheet (PDF)

FDP16AN08A0 — N-Channel PowerTrench® MOSFET October 2013 FDP16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 8266.

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FDP16AN08A0 — N-Channel PowerTrench® MOSFET October 2013 FDP16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82660 D GDS TO-220 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient (Note 2), Max. S FDP16AN08A0 75 ±20 58 44 9 Figure 4 117 135 0.9 -55 to 175 Unit V V A A A mJ W W/oC oC 1.11 62 oC/W oC/W ©2002 Fairchild Semiconductor Corporation 1 FDP16AN08A0 Rev. C2 www.fairchildsemi.com FDP16AN08A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP16AN08A0 Device FDP16AN08A0 Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 60V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 58A, VGS = 10V ID = 29A, VGS = 6V ID = 58A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 40V ID = 58A Ig = 1.0mA Switching Characteristics (VGS = 10V) tON Turn-On Time td(ON) Turn-On Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time tOFF Turn-Off Time VDD = 40V, ID = 58A VGS = 10V, RGS = 10Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr QRR Reverse Recovery Time Reverse Recovered Charge Notes: 1: Starting TJ = 25°C, L = 260µH, IAS = 30A. ISD = 58A ISD = 29A ISD = 58A, dISD/dt = 100A/µs ISD = 58A, dISD/dt = 100A/µs Min Typ Max Unit 75 - - V - - 1 µA - - 250 - - ±100 nA 2 - 4 V - 0.013 0.016 - 0.019 0.029 Ω - 0.032 0.037 - 1857 - pF - 288 - pF - 88 - pF 28 42 nC - 3..


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