58A/ 16m. FDP16AN08A0 Datasheet

FDP16AN08A0 Datasheet PDF, Equivalent


Part Number

FDP16AN08A0

Description

N-Channel PowerTrench MOSFET 75V/ 58A/ 16m

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
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FDP16AN08A0 Datasheet
July 2002
FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench® MOSFET
75V, 58A, 16m
Features
• rDS(ON) = 13m(Typ.), VGS = 10V, ID = 58A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82660
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
D
G
S
Ratings
75
±20
58
44
9
Figure 4
117
135
0.9
-55 to 175
1.11
62
43
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1

FDP16AN08A0 Datasheet
Package Marking and Ordering Information
Device Marking
FDB16AN08A0
FDP16AN08A0
Device
FDB16AN08A0
FDP16AN08A0
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 60V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 58A, VGS = 10V
ID = 29A, VGS = 6V
ID = 58A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain MillerCharge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V
ID = 58A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 40V, ID = 58A
VGS = 10V, RGS = 10
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 260µH, IAS = 30A.
ISD = 58A
ISD = 29A
ISD = 58A, dISD/dt = 100A/µs
ISD = 58A, dISD/dt = 100A/µs
Min Typ Max Units
75 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.013 0.016
- 0.019 0.029
- 0.032 0.037
- 1857 -
pF
- 288 -
pF
- 88 - pF
28 42 nC
- 3.5 5 nC
- 11 - nC
- 7.6 - nC
- 6.4 - nC
- - 135 ns
- 8 - ns
- 82 - ns
- 28 - ns
- 30 - ns
- - 86 ns
-
-
1.25
V
- - 1.0 V
- - 35 ns
- - 36 nC
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1


Features Datasheet pdf FDP16AN08A0 / FDB16AN08A0 July 2002 FD P16AN08A0 / FDB16AN08A0 N-Channel Power Trench® MOSFET 75V, 58A, 16mΩ Featur es • r DS(ON) = 13mΩ (Typ.), VGS = 10V, ID = 58A • Qg(tot) = 28nC (Typ.) , VGS = 10V • Low Miller Charge • L ow Qrr Body Diode • UIS Capability (S ingle Pulse and Repetitive Pulse) • Q ualified to AEC Q101 Formerly developme ntal type 82660 Applications • 42V A utomotive Load Control • Starter / Al ternator Systems • Electronic Power S teering Systems • Electronic Valve Tr ain Systems • DC-DC converters and Of f-line UPS • Distributed Power Archit ectures and VRMs • Primary Switch for 24V and 48V systems DRAIN (FLANGE) D SOURCE DRAIN GATE SOURCE GATE G TO-26 3AB FDB SERIES DRAIN (FLANGE) TO-220AB FDP SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbo l VDSS VGS Parameter Drain to Source Vo ltage Gate to Source Voltage Drain Curr ent Continuous (TC = 25oC, VGS = 10V) I D Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 43oC/W) P.
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