PowerTrench MOSFET. FDP2670 Datasheet

FDP2670 Datasheet PDF, Equivalent


Part Number

FDP2670

Description

200V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDP2670 Datasheet PDF


FDP2670 Datasheet
November 2001
FDP2670/FDB2670
200V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 200V MOSFETs with low on-resistance and
fast switching will benefit.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
19 A, 200 V. RDS(ON) = 130 m@ VGS = 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
dv/dt
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Peak Diode Recovery dv/dt
(Note 3)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB2670
FDB2670
13’’
FDP2670
FDP2670
Tube
G
Ratings
200
± 20
19
40
93
0.63
3.2
–65 to +175
1.6
62.5
Tape width
24mm
n/a
S
Units
V
V
A
A
W
W°/C
V/ns
°C
°C/W
°C/W
Quantity
800 units
45 units
2001 Fairchild Semiconductor Corporation
FDP2670/FDB2670 Rev C1(W)

FDP2670 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 100 V,
ID = 10 A
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 160 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 10 A
VGS = 10V, ID = 10 A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
VDS = 10 V,
ID = 10 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 100 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 100 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 100 V,
VGS = 10 V
ID = 10 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 10 A (Note 2)
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD 3A, di/dt 100A/µs, VDD BVDSS, Starting TJ = 25°C
Min Typ Max Units
375 mJ
10 A
200 V
241 mV/°C
1
100
–100
µA
nA
nA
2 4 4.5 V
–9 mV/°C
98 130
205 285
m
20 A
24 S
1320
71
24
pF
pF
pF
14 25
5 10
26 41
23 37
27 38
7
10
ns
ns
ns
ns
nC
nC
nC
19
0.8 1.3
A
V
FDP2670/FDB2670 Rev C1(W)


Features Datasheet pdf FDP2670/FDB2670 November 2001 FDP2670/ FDB2670 200V N-Channel PowerTrench M OSFET General Description This N-Channe l MOSFET has been designed specifically for switching on the primary side in t he isolated DC/DC converter application . Any application requiring a 200V MOSF ETs with low on-resistance and fast swi tching will benefit. These MOSFETs feat ure faster switching and lower gate cha rge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and D C/DC power supply designs with higher o verall efficiency. Features • 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge (27 nC typical) Fast switching speed • High perform ance trench technology for extremely lo w RDS(ON) • High power and current ha ndling capability D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDS S VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Cu.
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