60V N-Channel MOSFET
FDP5690/FDB5690
July 2000
FDP5690/FDB5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET...
Description
FDP5690/FDB5690
July 2000
FDP5690/FDB5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating.
D
D
G
G D S
TO-220
FDP Series
G S
TC = 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current
Parameter
FDP5690
60 ±20
FDB5690
Units
V V A W W/°C °C
- Continuous - Pulsed
32 100 58 0.4 -65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking
FDB5690 FDP5690
2000 Fairchild Semicond...
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