PowerTrench MOSFET. FDP6021P Datasheet

FDP6021P Datasheet PDF, Equivalent


Part Number

FDP6021P

Description

20V P-Channel 1.8V Specified PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
PDF Download
Download FDP6021P Datasheet PDF


FDP6021P Datasheet
April 2001
PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Battery management
Load switch
Voltage regulator
.
Features
–28 A, –20 V. RDS(ON) = 30 m@ VGS = 4.5 V
RDS(ON) = 40 m@ VGS = 2.5 V
RDS(ON) = 65 m@ VGS = 1.8 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low RDS(ON)
175°C maximum junction temperature rating
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDP6021P
FDP6021P
Tube
FDB6021P
FDB6021P
13”
G
Ratings
–20
±8
–28
–80
37
0.25
–65 to +175
4
62.5
Tape width
n/a
24mm
S
D
Units
V
V
A
W
W°C
°C
°C/W
°C/W
Quantity
45
800 units
2001 Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)

FDP6021P Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–20
V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V
–16 mV/°C
–1 µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V VDS = 0 V
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –14 A
VGS = –2.5 V, ID = –12 A
VGS = –1.8 V, ID = –10 A
VGS= –4.5V, ID = –14 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –14 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –10 V,
VGS = –4.5 V
ID = –14 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward VGS = 0 V, IS = –14 A
Voltage
–0.4
–40
–0.7
3
24
31
50
30
33
1890
302
124
13
10
80
50
20
4
7
–0.9
–1.5
30
40
65
42
23
20
128
80
28
–28
–1.3
V
mV/°C
m
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6021P/FDB6021P Rev. B(W)


Features Datasheet pdf FDP6021P/FDB6021P April 2001 PRELIMINAR Y FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET Genera l Description This P-Channel power MOSF ET uses Fairchild’s low voltage Power Trench process. It has been optimized f or power management applications. Feat ures • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V • Critical DC electrical parame ters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C ma ximum junction temperature rating Appl ications • Battery management • Loa d switch • Voltage regulator . D G S G G D S TO-220 FDP Series S TO-26 3AB FDB Series D Absolute Maximum Rat ings Symbol VDSS VGSS ID PD TJ, TSTG Dr ain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Param eter Ratings –20 ±8 (Note 1) (Note 1) Units V V A W W °C °C –28 –80 37 0.25 –65 to +175 Total Power Dissipation @ TC = 25°C Derate .
Keywords FDP6021P, datasheet, pdf, Fairchild Semiconductor, 20V, P-Channel, 1.8V, Specified, PowerTrench, MOSFET, DP6021P, P6021P, 6021P, FDP6021, FDP602, FDP60, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)