Document
FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating.
D
D
G
G D S
TO-220
FDP Series
G S
TC = 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current
Parameter
FDP6030BL
FDB6030BL
30 ±20 40 120 60 0.36
Units
V V A W W/°C °C °C/W °C/W
- Continuous - Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
-65 to +175
Thermal Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5
Package Marking and Ordering Information
Device Marking
FDB6030BL FDP6030BL
Device
FDB6030BL FDP6030BL
Reel Size
13’’ Tube
Tape Width
24mm N/A
Quantity
800 45
200 Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Electrical Characteristics
Symbol
WDSS IAR
TC = 25°C unless otherwise noted
Parameter
Test Conditions
(Note 1)
Min
Typ
Max
150 40
Units
mJ A
DRAIN-SOURCE AVALANCHE RATINGS
Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 1)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
30 23 1 100 -100
V mV/°C µA nA nA
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A, TJ = 125°C VGS = 4.5 V,ID = 17 A VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 20 A
1
1.6 -4.5 0.015 0.021 0.019
3
V mV/°C Ω
0.018 0.030 0.024
ID(on) gFS
40 30
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
VDS = 15 V, VGS = 0 V, f = 1..