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FDP6030BL Dataheets PDF



Part Number FDP6030BL
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP6030BL DatasheetFDP6030BL Datasheet (PDF)

FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Feature.

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FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP6030BL FDB6030BL 30 ±20 40 120 60 0.36 Units V V A W W/°C °C °C/W °C/W - Continuous - Pulsed (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 Package Marking and Ordering Information Device Marking FDB6030BL FDP6030BL Device FDB6030BL FDP6030BL Reel Size 13’’ Tube Tape Width 24mm N/A Quantity 800 45 200 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL Electrical Characteristics Symbol WDSS IAR TC = 25°C unless otherwise noted Parameter Test Conditions (Note 1) Min Typ Max 150 40 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR 30 23 1 100 -100 V mV/°C µA nA nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A, TJ = 125°C VGS = 4.5 V,ID = 17 A VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 20 A 1 1.6 -4.5 0.015 0.021 0.019 3 V mV/°C Ω 0.018 0.030 0.024 ID(on) gFS 40 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) VDS = 15 V, VGS = 0 V, f = 1..


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