Effect Transistor. FDP6030L Datasheet

FDP6030L Datasheet PDF, Equivalent


Part Number

FDP6030L

Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
PDF Download
Download FDP6030L Datasheet PDF


FDP6030L Datasheet
April 1998
FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
52
A,
30
V.
RDS(ON)
RDS(ON)
=
=
00..0012305ΩΩ@@VVGSG=S=41.50VV.
Improved replacement for NDP6030L/NDB6030L.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise note
Symbol Parameter
FDP6030L
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
30
±20
52
156
75
0.5
-65 to 175
FDB6030L
2
62.5
© 1998 Fairchild Semiconductor Corporation
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
FDP6030L Rev.C1

FDP6030L Datasheet
Electrical Characteristics TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche Energy
IAR Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
VDD = 15 V, ID = 21 A
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
ID(on) On-State Drain Current
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 26 A
TJ = 125°C
VGS = 4.5 V, ID = 21 A
VGS = 10 V, VDS = 10 V
VGS = 4.5 V, VDS = 10 V
VDS = 10 V, ID = 26 A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
VDD = 15 V, ID = 52 A
VGS = 10 V, RGEN = 24
VDS= 12 V
ID = 26 A, VGS = 10 V
IS Maximum Continuos Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 26 A (Note 1)
TJ = 125°C
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min Typ Max Unit
150 mJ
21 A
30
37
V
mV/oC
10 µA
100 nA
-100 nA
1 1.6
-4
3V
mV/oC
0.0095 0.0135
0.014 0.023
0.015 0.02
60
A
15
37
A
S
1230
640
175
pF
pF
pF
7.6 15 nS
150 210 nS
29 46 nS
17 27 nS
34 46 nC
6 nC
8 nC
52
0.91 1.3
0.8 1.2
A
V
FDP6030L Rev.C1


Features Datasheet pdf April 1998 FDP6030L / FDB6030L N-Channe l Logic Level Enhancement Mode Field Ef fect Transistor General Description The se N-Channel logic level enhancement mo de power field effect transistors are p roduced using Fairchild's proprietary, high cell density, DMOS technology. Thi s very high density process is especial ly tailored to minimize on-state resist ance. These devices are particularly su ited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switchin g, low in-line power loss, and resistan ce to transients are needed. Features 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS= 10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. I mproved replacement for NDP6030L/NDB603 0L. Low gate charge (typical 34 nC). Lo w Crss (typical 175 pF). Fast switching speed. ______________________________ _______________________________________ ____________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Paramet er Drain-Source Voltage T C = 25°C unless otherwise note FDP6030L.
Keywords FDP6030L, datasheet, pdf, Fairchild Semiconductor, N-Channel, Logic, Level, Enhancement, Mode, Field, Effect, Transistor, DP6030L, P6030L, 6030L, FDP6030, FDP603, FDP60, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)