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FDP6035AL Dataheets PDF



Part Number FDP6035AL
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP6035AL DatasheetFDP6035AL Datasheet (PDF)

July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC p.

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July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 48A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V, RDS(ON) = 0.017 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) (Note 1) T C = 25°C unless otherwise noted FDP6035AL 30 ±20 48 150 58 0.4 -65 to 175 275 FDB6035AL Units V V A Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.6 62.5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDP6035AL Rev.C Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 48 A 130 48 mJ A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 24 A TJ = 125°C VGS = 4.5 V, ID = 20 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 24 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 48 33 1 1.5 -5 0.011 0.017 0.015 0.0125 0.021 0.017 A S o 30 22 1 100 -100 V mV/oC µA nA nA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance 3 V mV/oC ∆VGS(th)/∆TJ RDS(ON) Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD trr Irr Notes Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) 1650 365 170 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 10 12 35 10 18 22 56 18 23 nS nS nS nS nC nC nC VDS = 15 V , ID = 48 A VGS = 5 V 17 6.2 6.8 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current (Note 1) (Note 1) (Note1) 48 150 1.05 23 0.74 1.3 40 1.3 A A V ns A VGS = 0 V, IS = 24 A VGS = 0 V, IF = 30 A dIF/dt = 100 A/µs 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. FDP6035AL Rev.C Typical Electrical Characteristics 100 ID , DRAIN-SOURCE CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 1.8 6.0V 5.0V 4.5V 4.0V VGS = 3.5V 1.5 80 4.0V 4.5V 5.0V 60 3.5V 40 1.2 6.0V 10V 3.0V 20 0.9 2.5V 0 0 1 2 3 4 5 0.6 VDS , DRAIN-SOURCE VOLTAGE (V) 0 20 40 60 80 100 ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 R DS(ON) , ON-RESISTANCE (OHM) 2 DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 24A VGS = 10V I D = 24A 0.04 R DS(ON) , NORMALIZED 0.03 0.02 TA = 125°C 0.01 TA = 25°C 0 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) 10 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 60 V DS = 10V I D , DRAIN CURRENT (A) 50 40 30 20 10 0 25°C 125°C I S , REVERSE DRAIN CURRENT (A) TA = -55°C V GS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125°C 25°C -55°C 1 V 2 GS 3 4 5 , GATE TO SOURCE VOLTAGE (V) 0 0.2 V SD 0.4 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Sour.


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