FDP6670S

FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S 30V N-Channel PowerTrench® SyncFET ™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. Features 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (23nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W/°C °C °C 62 150 62.5 0.5 –55 to +150 275 Total Power Dissipation @ TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junc...