FDP6676

FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) . Features 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating Applications Synchronous rectifier DC/DC converter . D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A W W °C °C 84 240 93 0.48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6676 FDB6676 Device FDP6676 FDB6676 Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2000 Fairchild Semiconductor Corporation FDP6676/FDB6676 Rev C(W...