FDP8870

FDP8870 e May 2008 FDP8870 N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications DC/DC converters tmM Features rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN GATE G TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 ( Note 3) Package Marking and Ordering Information Device Marking FDP8870 Device FDP8870 Package TO-220AB Reel Size Tube D S Ratings 30 ±20 156 147 19 Figure 4 300 160 1.07 -55 to 175 0.94 62 Units V V A A A A mJ W W/oC oC oC/W oC/W Tape Width N/A Quantity 5...