PowerTrench MOSFET. FDR6580 Datasheet

FDR6580 Datasheet PDF, Equivalent


Part Number

FDR6580

Description

N-Chennal 2.5V Specified PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDR6580 Datasheet


FDR6580 Datasheet
April 1999
ADVANCE INFORMATION
FDR6580
N-Chennal 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• Load switch
• Motor driving
• Power Management
Features
• 11 A, 20 V. RDS(ON) = 0.009 @ VGS = 4.5 V
RDS(ON) = 0.013 @ VGS = 2.5 V.
• Low gate charge.
• High performance trench technology for extremely
low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
S
D
D
S
G
D
TM
SuperSOT -8
D
D
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.6580
FDR6580
13’’
Ratings
20
±8
11
50
1.8
1.0
0.9
-55 to +150
70
20
Tape Width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDR6580, Rev. A

FDR6580 Datasheet
Electrical Characteristics TA=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
20
V
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V
1 µA
IGSSF
Gate-Body Leakage, Forward
VGS = 8 V, VDS = 0 V
10 µA
IGSSR
Gate-Body Leakage, Reverse
VGS = -8 V, VDS = 0 V
-10 µA
ON CHARACTERISTICS (Note 2)
VGS(TH) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
0.4
1.5 V
RDS(ON)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID = 11 A
VGS = 2.5 V, ID = 9.3 A
0.009
0.013
ID(ON)
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
25
A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
1.5 A
VSD
Drain-Source Diode Forward
VGS = 0 V, IS = 1.5 A
(Note 2)
Voltage
1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 70° C/W when mounted on a
1.0 in2 pad of 2 oz. copper.
b) 125° C/W when mounted on
a 0.026 in2 pad of 2oz. copper.
c) 135° C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDR6580, Rev. A


Features Datasheet pdf FDR6580 April 1999 ADVANCE INFORMATION FDR6580 N-Chennal 2.5V Specified Power TrenchTM MOSFET General Description Thi s N-Channel 2.5V specified MOSFET is pr oduced using Fairchild Semiconductor's advanced PowerTrench process that has b een especially tailored to minimize the on-state resistance and yet maintain l ow gate charge for superior switching p erformance. Features • • • • 11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Lo w gate charge. High performance trench technology for extremely low RDS(ON). S mall footprint (38% smaller than a stan dard SO-8); low profile package (1 mm t hick); power handling capability simila r to SO-8. Applications • • • Load switch Motor driving Power Management D S D S 5 6 D G 4 3 2 1 7 8 Super SOT -8 TM D D Absolute Maximum Ratin gs Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Curre nt - Continuous - Pulsed TA = 25°C un less otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W ±8 11.
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