N-Channel MOSFET
FDR6674A
April 2000 PRELIMINARY
FDR6674A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET h...
Description
FDR6674A
April 2000 PRELIMINARY
FDR6674A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8.5 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability in a smaller footprint than SO8
Applications
Synchronous rectifier DC/DC converter
D S
D
S
5 6 4 3 2 1
SuperSOT -8
TM
D
D
D
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
11.5 50 1.8 1.0 0.9 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
70 20
°C/W °C/W
Package Marking and Ordering Information
Device Marking .6674A Device FDR6674A Reel Size 13’’ Tape width 12mm Quantity 2500 units
2000 Fairchild Semiconductor Corporation
FDR6674A Rev C(W)
FDR6674A
Electrical Characteristics
Symbo...
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