FDR6674A

FDR6674A April 2000 PRELIMINARY FDR6674A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8.5 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability in a smaller footprint than SO8 Applications Synchronous rectifier DC/DC converter D S D S 5 6 4 3 2 1 SuperSOT -8 TM D D D G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 11.5 50 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W Package Marking and Ordering Information Device Marking .6674A Device FDR6674A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDR6674A Rev C(W) FDR6674A Electrical Characteristics Symbo...