FDR8305N

FD8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V. Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8. Applications Load switch Motor driving Power Management D2 D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT -8 TM G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W °C 4.5 20 0.8 -55 to +150 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 156 40 °C/W °C/W Package Marking and Ordering Information Device Marking .8305 Device FDR8305N Reel Size 13’’ Tape Width 12mm Quantity 3000 units 1999 Fairchild Semiconductor Corporati...