FDR8321L

August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package. Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS(ON) = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. VON/OFF Zener protection for ESD ruggedness (>6KV Human Body Model). High density cell design for extremely low on-resistance. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 VOUT,C1,CO 5 6 7 8 Q2 4 3 EQUIVALENT CIRCUIT VIN,R1,Ci VOUT,C1,CO R1,R2,C1 IN + VDROP - OUT R2 Q1 2 1 C1,CO R2 VON/OFF O N / O FF pin 1 SuperSOT -8 TM See Application Circuit Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted FDR8321L Units VIN VON/OFF IL Input Voltage Range On/Off Voltage Range Load Current @ VDROP= 0.2V - Continuous - Pulsed (Note 1) 2.5 - 8 1.5 - 8 2.9 10 (Note 2) V V A PD TJ,TSTG Maximum Power Dissipation Operating and Storage Temperature Range 0.8 -55 to 150 W °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 2) (Note 2) 156 40 °C/W °C/W ©2000 Fairchild Semiconductor Interna...