P-Channel MOSFET
February 1999
FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of ...
Description
February 1999
FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power comperable to SO-8.
SOT-23
SuperSOTTM-6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D S
D
S
5 6
D G
4 3 2 1
7 8
SuperSOT -8
Mark: 858P
TM
D D
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
Ratings Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
-30 ±20
(Note 1)
V V A
-8 -50 1.8 1 0.9 -55 to 150
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Therm...
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