PowerTrench MOSFET. FDS2070N3 Datasheet

FDS2070N3 Datasheet PDF, Equivalent


Part Number

FDS2070N3

Description

150V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDS2070N3 Datasheet PDF


FDS2070N3 Datasheet
May 2003
FDS2070N3
150V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
4.1 A, 150 V. RDS(ON) = 78 m@ VGS = 10 V
RDS(ON) = 88 m@ VGS = 6.0 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching, low gate charge (38nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2070N3
FDS2070N3
13’’
2002 Fairchild Semiconductor International
Ratings
150
± 20
4.1
30
3.0
1.8
–55 to +150
40
0.5
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
FDS2070N3 Rev B1(W)

FDS2070N3 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 75 V, ID= 4.1 A
IAR Drain-Source Avalanche Current
370 mJ
4.1 A
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 120 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
150 V
154 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
VGS = 6.0V,
VGS = 10 V,
VDS = 10 V,
ID = 4.1 A
ID = 3.8 A
ID = 4.1 A,TJ = 125°C
ID = 4.1 A
2 2.6 4
V
–7 mV/°C
58
61
112
24
78
88
160
m
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 75 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1884
102
35
1.6
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 75 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 75 V, ID = 4.1 A,
VGS = 10 V
10 20
ns
6 12 ns
40 64 ns
20 36
ns
38 53 nC
8 nC
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
trr Diode Reverse Recovery Time IF = 4.1A
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
2.5
0.75 1.2
75
404
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in2 pad
b) 85°C/W when mounted on
a minimum pad of 2 oz
of 2 oz copper
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2070N3 Rev B1(W)


Features Datasheet pdf FDS2070N3 May 2003 FDS2070N3 150V N-Ch annel PowerTrench MOSFET General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchrono us rectifier operation, providing an ex tremely low RDS(ON) in a small package. Features • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V • High performance tren ch technology for extremely low RDS(ON) • High power and current handling ca pability • Fast switching, low gate c harge (38nC typical) • FLMP SO-8 pack age: Enhanced thermal performance in in dustry-standard package size Applicati ons • Synchronous rectifier • DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Rati ngs Symbol VDSS VGSS ID PD TJ, TSTG Dra in-Source Voltage Gate-Source Voltage D rain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings .
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