FDS2670

FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) dv/dt TJ, TSTG Peak Diode Recovery dv/dt (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS2670 FDS2670 13’’ 5 4 6 3 7 2 8 1 Ratings 200 ±20 3.0 20 2.5 1.2 1.0 3.2 −55 to +150 50 125 25 Tape wi...