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FDS3572 Dataheets PDF



Part Number FDS3572
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS3572 DatasheetFDS3572 Datasheet (PDF)

FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Primary switch for Isolated DC/DC converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters Formerly developmen.

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FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Primary switch for Isolated DC/DC converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters Formerly developmental type 82663 Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, Rθ JA = 50oC/W) Continuous (TA = 100oC, VGS = 10V, Rθ JA = 50oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 8.9 5.6 Figure 4 515 2.5 20 -55 to 150 A A A mJ W mW/oC o Ratings 80 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 25 50 85 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking FDS3572 Device FDS3572 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A FDS3572 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 60V VGS = 0V VGS = ±20V TA = 150oC 80 1 250 ±100 V µA nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 8.9A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 5.6A, VGS = 6V ID = 8.9A, VGS = 10V, TA= 150oC 2 0.014 0.019 0.027 4 0.016 0.029 0.032 Ω V Dynamic Characteristics CISS COSS CRSS Qg(tot) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge (VGS = 10V) VDD = 40V, ID = 8.9A VGS = 10V, RGS = 10Ω 13 14 31 13 40 67 ns ns ns ns ns ns VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 40V ID = 8.9A Ig = 1.0mA 1990 320 85 31 4 9 5 7.5 41 5.2 pF pF pF nC nC nC nC nC Switching Characteristics tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 8.9A ISD = 4.3A ISD= 8.9A, dISD/dt= 100A/µs ISD= 8.9A, dISD/dt= 100A/µs 1.25 1.0 50 70 V V ns nC Notes: 1: Starting TJ = 25°C, L = 21mH, IAS = 7A. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board ©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A FDS3572 Typical Characteristics TA = 25°C unless otherwise noted 1.2 POWER DISSIPATION MULTIPLIER 10 VGS = 10V 1.0 ID, DRAIN CURRENT (A) 8 0.8 6 0.6 4 0.4 0.2 2 RθJA=50oC/W 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature ZθJA, NORMALIZED THERMAL IMPEDANCE 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM RθJA=50oC/W 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) 101 102 103 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125 VGS = 10V 100 10 5 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 102 103 Figure 4. Peak Current Capability ©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A FDS3572 Typical Characteristics TA = 25°C unless otherwise noted 50 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID , DRAIN CURRENT (A) 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 150oC 10 TJ = 25oC 5 TJ = -55oC IAS, AVALANCHE CURRENT (A) 15 10 STARTING TJ = 25oC STARTING TJ = 150oC 1 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 0 3.0 3.5 4.0 4.5 5.0 5.5 VGS , GATE TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN7514 and.


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