N-Channel MOSFET
FDS3580
April 1999 PRELIMINARY
FDS3580
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET ha...
Description
FDS3580
April 1999 PRELIMINARY
FDS3580
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V.
Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
80
(Note 1a)
Units
V V A W
±20 7.6 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
FDS3580
Device
FDS3580
Reel Size
13’’
Tape Width
12mm
Quantity
2500 ...
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