FDS3672

FDS3672 March 2003 FDS3672 N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ Features r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Formerly developmental type 82763 Electronic Valve Train Systems Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 100oC, VGS = 10V, Rθ JA = 50oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 7.5 4.8 Figure 4 416 2.5 20 -55 to 150 A A A mJ W mW/oC o Ratings 100 ±20 Units V V C Thermal Characteristics Rθ JA Rθ JA Rθ JC Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) Thermal Resistance, Junction to Case (Note 2) 50 85 25 oC/W oC/W o C/W Package Marking and Ordering Information Device Marking FDS3672 Device FDS3672 Package SO-8 Reel Size 330mm Tape Wi...