N-Channel MOSFET
FDS3812
May 2001
FDS3812
80V N-Channel Dual PowerTrench MOSFET
General Description
This N-Channel MOSFET has been des...
Description
FDS3812
May 2001
FDS3812
80V N-Channel Dual PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
3.4 A, 80 V. RDS(ON) = 74 mΩ @ VGS = 10 V RDS(ON) = 84 mΩ @ VGS = 6 V
Fast switching speed Low gate charge (13nC typ) High performance trench technology for extremely low RDS(ON) High power and current handling capability
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
80 ± 20
(Note 1a)
Units
V V A W
3.4 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 –55 to +175 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS3812 Device FDS3812 Reel Size 13’’ Tape width...
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