Document
FDS4070N3
May 2003
FDS4070N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
• 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• Synchronous rectifier • DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
40 ± 20
(Note 1a)
Units
V V A W °C
15.3 60 3.0 –55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS4070N3 Device FDS4070N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS4070N3 Rev B1 (W)
FDS4070N3
Electrical Characteristics
Symbol
EAS IAS BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD=40V, ID=15.3A
Min Typ
Max
310 15.3
Units
mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V
40 42 1 100 –100
V mV/°C µA nA nA
VGS = 20 V, VDS = 0 V VGS = –20 V, VDS = 0 V ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25 °C VGS = 10 V, ID = 15.3 A VGS = 10 V, ID=15.3A, TJ =125°C VGS = 10 V, VDS = 5 V VDS = 10 V, VDS = 20 V, f = 1.0 MHz ID = 15.3 A V GS = 0 V, 2 3.9 –8 5.5 8 30 52
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
5
V mV/°C
7.5 12
mΩ A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 16 12 41 29 VDS = 20 V, VGS = 10 V ID = 15.3 A, 47 15 14 29 22 66 46 67 ns ns ns ns nC nC nC 2819 600 291 pF pF pF
Switching Characteristics
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
FDS4070N3 Rev B1 (W)
FDS4070N3
Electrical Characteristics
Symbol
IS VSD trr Qrr
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
2.5
Units
A V nS nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = 2.5 A VGS = 0 V, Voltage Diode Reverse Recovery Time IF = 15.3 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge
(Note 2)
0.7 32 39
1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0
FDS4070N3 Rev B1 (W)
FDS4070N3
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 7.0V
6.0V
3
5.5V
VGS = 5.0V
2.6 2.2 1.8 1.4 1 0.6
5.0V
30 20
5.5V 6.0V 7.0V 10V
4.5V
10 0 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.015 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 15.3A VGS = 10V
ID = 7.7A
0.013 0.011
TA = 125oC
0.009 0.007
TA = 25oC
0.005 0.003 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC
VDS = 5V
50 ID, DRAIN CURRENT (A) 40 30
TA =125oC
.