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FDS4070N3 Dataheets PDF



Part Number FDS4070N3
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS4070N3 DatasheetFDS4070N3 Datasheet (PDF)

FDS4070N3 May 2003 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(.

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FDS4070N3 May 2003 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • Synchronous rectifier • DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 40 ± 20 (Note 1a) Units V V A W °C 15.3 60 3.0 –55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS4070N3 Device FDS4070N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS4070N3 Rev B1 (W) FDS4070N3 Electrical Characteristics Symbol EAS IAS BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD=40V, ID=15.3A Min Typ Max 310 15.3 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V 40 42 1 100 –100 V mV/°C µA nA nA VGS = 20 V, VDS = 0 V VGS = –20 V, VDS = 0 V ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25 °C VGS = 10 V, ID = 15.3 A VGS = 10 V, ID=15.3A, TJ =125°C VGS = 10 V, VDS = 5 V VDS = 10 V, VDS = 20 V, f = 1.0 MHz ID = 15.3 A V GS = 0 V, 2 3.9 –8 5.5 8 30 52 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance 5 V mV/°C 7.5 12 mΩ A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 16 12 41 29 VDS = 20 V, VGS = 10 V ID = 15.3 A, 47 15 14 29 22 66 46 67 ns ns ns ns nC nC nC 2819 600 291 pF pF pF Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge FDS4070N3 Rev B1 (W) FDS4070N3 Electrical Characteristics Symbol IS VSD trr Qrr TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max 2.5 Units A V nS nC Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = 2.5 A VGS = 0 V, Voltage Diode Reverse Recovery Time IF = 15.3 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge (Note 2) 0.7 32 39 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0 FDS4070N3 Rev B1 (W) FDS4070N3 Typical Characteristics 60 50 ID, DRAIN CURRENT (A) 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 7.0V 6.0V 3 5.5V VGS = 5.0V 2.6 2.2 1.8 1.4 1 0.6 5.0V 30 20 5.5V 6.0V 7.0V 10V 4.5V 10 0 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.015 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 15.3A VGS = 10V ID = 7.7A 0.013 0.011 TA = 125oC 0.009 0.007 TA = 25oC 0.005 0.003 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 TA =125oC .


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