P-Channel MOSFET
FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged ...
Description
FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Applications
Power management Load switch Battery protection
Features
–8.8 A, –30 V
RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD DD DD DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435
FDS4435
13’’
©2001 Fairchild Semiconductor Corporation
54 63 72 81
Ratings
–30 ±25 –8.8 –50 2.5 1.2
1 –55 to +175
50 125 25
Tape width 12mm
Units
V V A
W
°C
°C/W °C/W °C/W
Quantity 2500 units
FDS4435 Rev F1(W)
FDS4435
Electrical ...
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