FDS4501H

FDS4501H May 2001 FDS4501H Complementary PowerTrench® Half-Bridge MOSFET General Description This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V Q2: P-Channel –5.6A, –20V RDS(on) = 46 mΩ @ V GS = –4.5V RDS(on) = 63 mΩ @ V GS = –2.5V Applications DC/DC converter Power management Load switch Battery protection D D D D D D DD Q2 5 6 Q1 4 3 2 1 SO-8 SO-8 S S S G 7 8 2 G S2 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Parameter - Continuous - Pulsed Power Dissipation for Single Operation G S1 1 Q1 30 (Note 1a) Q2 –20 ±8 –5.6 –20 2.5 1.2 1 –55 to +150 Units V V A W ±20 9.3 20 (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4501H Device FDS4501H Reel Size 13” Tape width 12mm Quantity 2500 units © 2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W) FDS4501H Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ I...