Document
FDS4675
February 2001
FDS4675
40V P-Channel PowerTrench® MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).
Features
• –11 A, –40 V RDS(ON) = 0.013 Ω @ V GS = –10 V RDS(ON) = 0.017 Ω @ V GS = –4.5 V
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Applications
• Power management • Load switch • Battery protection
D D SO-8
DD
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25oC unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings –40
±20
(Note 1a)
Units
V V A W
–11 –50
2.4 (steady state) 1.4 1.2 -55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
62.5 (steady state), 50 (10 sec) 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS4675 Device FDS4675 Reel Size 13’’ Tape width 12mm Quantity 2500 units
© 2001 Fairchild Semiconductor Corporation
FDS4675 Rev C(W)
FDS4675
Electrical Characteristics
Symbol
BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V GS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C V DS = –32 V, V GS = 0 V V GS = 20 V, V GS = –20 V V DS = 0 V V DS = 0 V
Min
–40
Typ
Max Units
V
Off Characteristics
–34 –1 100 –100 mV/°C µA nA nA
On Characteristics
V GS(th) ∆V GS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C V GS = –10 V, ID = –11 A V GS = –4.5 V, ID = –9.5 A V GS =–10 V, ID =–11 A, TJ =125°C V GS = –10 V, V DS = –5 V, V DS = –5 V ID = –11 A
–1
–1.4 4.6 10 13 15
–3
V mV/°C
13 17 21
mΩ
ID(on) gFS
–25 44
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = –20 V, f = 1.0 MHz
V GS = 0 V,
4350 622 290
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
V DD = –20 V, V GS = –4.5 V,
ID = –1 A, RGEN = 6 Ω
20 29 95 60
36 46 152 96 56
ns ns ns ns nC nC nC
V DS = –20 V, V.