FDS4780

March 2003 FDS4780 FDS4780 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 10.8 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V Low gate charge (30 nC) High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter D D SO-8 D D DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 40 ± 20 (Note 1a) Units V V A W 10.8 45 2.5 1.4 1.2 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS4780 Device FDS4780 Reel Size 13’’ Tape width 11mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS4780 Rev B (W) FDS4780 Electrical Characteristics Symbol EAS IAS BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGS...