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FDS5670 Dataheets PDF



Part Number FDS5670
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS5670 DatasheetFDS5670 Datasheet (PDF)

FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs .

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FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 60 (Note 1a) Units V V A W ±20 10 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS5670 Device FDS5670 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDS5670 Rev. B FDS5670 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min 60 Typ Max Units V Off Characteristics 58 1 100 -100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TJ=125°C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 10 A 2 2.4 6.8 0.012 0.019 0.014 4 V mV/°C 0.014 0.027 0.017 Ω ID(on) gFS 25 39 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, VGS = 0 V f = 1.0 MHz 2900 685 180 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω 16 10 50 23 29 20 80 42 70 ns ns ns ns nC nC nC VDS = 20 V, ID .


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