Document
FDS5670
August 1999
FDS5670
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V.
Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
D D
D
D
5 6 4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
S
S
S
G
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
60
(Note 1a)
Units
V V A W
±20 10 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking
FDS5670
Device
FDS5670
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS5670 Rev. B
FDS5670
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
60
Typ
Max Units
V
Off Characteristics
58 1 100 -100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆T J RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TJ=125°C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 10 A
2
2.4 6.8 0.012 0.019 0.014
4
V mV/°C
0.014 0.027 0.017
Ω
ID(on) gFS
25 39
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V f = 1.0 MHz
2900 685 180
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω
16 10 50 23
29 20 80 42 70
ns ns ns ns nC nC nC
VDS = 20 V, ID .