FDS5680

FDS5680 July 1999 FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • • • • • 8 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 6 V. Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • • • DC/DC converter Load switch Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 60 (Note 1a) Units V V A W ±20 8 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS5680 Device FDS5680 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FD...