N-Channel MOSFET
FDS6064N3
May 2003
FDS6064N3
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been desi...
Description
FDS6064N3
May 2003
FDS6064N3
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier DC/DC converter FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1a)
Units
V A W °C
23 60 3.0 –55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS6064N3 Device FDS6064N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS6064N3 Rev B2 (W)
FDS6064N3
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leak...
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