N-Channel MOSFET
FDS6064N7
May 2003
FDS6064N7
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been desi...
Description
FDS6064N7
May 2003
FDS6064N7
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.8 V
High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
Synchronous rectifier DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1a)
Units
V A W °C
23 60 3.0 –55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS6064N7 Device FDS6064N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS6064N7 Rev D2 (W)
FDS6064N7
Elect...
Similar Datasheet