FDS6570A

FDS6570A March 2000 FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V. Low gate charge (47nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Load switch Battery protection D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter FDS6570A 20 (Note 1a) Units V V A W ±8 15 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS6570A Device FDS6570A Reel Size 13’’ Tape Width 12mm Quantity 2500 un...