20V N-Channel PowerTrench MOSFET
FDS6572A
September 2001
FDS6572A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been ...
Description
FDS6572A
September 2001
FDS6572A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 2.5 V Low gate charge (57 nC) High performance trench technology for extremely low RDS(ON) High power and current handling capability
Applications
DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W
16 80 2.5 1.2 1.0 –55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6572A Device FDS6572A Reel Size 13’’ Tape width 12mm Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6572A Rev C (W)
FDS6572A
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source ...
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