FDS6574A

FDS6574A June 2001 PRELIMINARY FDS6574A 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.8 V Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 16 80 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6574A Device FDS6574A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6574A Rev B (W) FDS6574A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted ...